TwinMOS 8DHE3MN8-HATP 2GB vs Kingston KCDT82-MIE 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值
更快的写入速度，GB/s

870.4 12.5

测试中的平均数值

Kingston KCDT82-MIE 4GB

需要考虑的原因
Kingston KCDT82-MIE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 87

左右 -129% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KCDT82-MIE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 38
读取速度，GB/s

3,155.6 17.0
写入速度，GB/s

870.4 12.5
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

417 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4DFS8213.C8FDR1 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Samsung V-GeN D4S8GL24A8 8GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16G