TwinMOS 8DHE3MN8-HATP 2GB vs Kingston KHX3466C19D4/8G 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.5

测试中的平均数值
更快的写入速度，GB/s

870.4 15.8

测试中的平均数值

Kingston KHX3466C19D4/8G 8GB

需要考虑的原因
Kingston KHX3466C19D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 87

左右 -222% 更低的延时
更高的内存带宽，mbps

27700 5300

左右 5.23 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Kingston KHX3466C19D4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 27
读取速度，GB/s

3,155.6 18.5
写入速度，GB/s

870.4 15.8
内存带宽，mbps

5300 27700

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz no data
排名PassMark (越多越好)

417 3539

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Team Group Inc. TEAMGROUP-UD4-3600 8GB

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Avant Technology F6451U64F9333G 4GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

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Kingston 9905403-090.A01LF 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB