Samsung M395T2863QZ4-CF76 1GB vs Corsair CMSO8GX4M1A2133C15 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14

测试中的平均数值
更快的写入速度，GB/s

2,404.5 10.2

测试中的平均数值

Corsair CMSO8GX4M1A2133C15 8GB

需要考虑的原因
Corsair CMSO8GX4M1A2133C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 104

左右 -174% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Corsair CMSO8GX4M1A2133C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 38
读取速度，GB/s

3,192.0 14.0
写入速度，GB/s

2,404.5 10.2
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2407

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5143SB1-CRC 4GB

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Corsair CMSX16GX4M2A2666C18 8GB

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Kingston KCRXJ6-MIE 16GB

Kingston KCRXJ6-MIE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD128GX4M8B2800C14 16GB

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Samsung M471A1G44AB0-CWE 8GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB

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Kingston 99U5471-025.A00LF 4GB

Kingston KHX2400C15S4/8G 8GB

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