TwinMOS 8DHE3MN8-HATP 2GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的写入速度，GB/s

870.4 6.8

测试中的平均数值

Micron Technology 9ASF51272PZ-2G1AX 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 87

左右 -123% 更低的延时
更快的读取速度，GB/s

7.7 3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 39
读取速度，GB/s

3,155.6 7.7
写入速度，GB/s

870.4 6.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

417 1768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Crucial Technology BLS16G4D240FSE.16FBR 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Samsung M471B5173BH0-CH9 4GB

Samsung M471B5173BH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB