TwinMOS 8DHE3MN8-HATP 2GB vs Panram International Corporation PUD42400C168GVS 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值
更快的写入速度，GB/s

870.4 13.4

测试中的平均数值

Panram International Corporation PUD42400C168GVS 8GB

需要考虑的原因
Panram International Corporation PUD42400C168GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 87

左右 -278% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Panram International Corporation PUD42400C168GVS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 23
读取速度，GB/s

3,155.6 17.4
写入速度，GB/s

870.4 13.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 3063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C14-8GTZKW 8GB

G Skill Intl F4-3200C14-8GTZKW 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingston 9905700-024.A00G 8GB

Kingston 9905700-024.A00G 8GB

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB