TwinMOS 8DHE3MN8-HATP 2GB vs SK Hynix HMA851U6CJR6N-VK 4GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值
更快的写入速度，GB/s

870.4 12.1

测试中的平均数值

SK Hynix HMA851U6CJR6N-VK 4GB

需要考虑的原因
SK Hynix HMA851U6CJR6N-VK 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 87

左右 -172% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA851U6CJR6N-VK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 32
读取速度，GB/s

3,155.6 16.8
写入速度，GB/s

870.4 12.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

417 2641

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G36C16U4BL.M8FE1 8GB

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Avant Technology F641GU67F9333G 8GB

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Crucial Technology CT8G4DFD824A.M16FB 8GB

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Corsair CMK8GX4M2B4200C19 4GB

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Samsung M471A4G43AB1-CWE 32GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB