TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值

Crucial Technology BLS16G4D30AESC.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 -89% 更低的延时
更快的写入速度，GB/s

13.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 28
读取速度，GB/s

3,726.4 17.4
写入速度，GB/s

1,590.1 13.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 3437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Micron Technology 8ATF1G64HZ-2G6E1 8GB

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

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G Skill Intl F4-3200C14-16GFX 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB

Essencore Limited IM4AGU88N26-GIIHA0 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMK32GX4M2A2400C14 16GB

Corsair CMK32GX4M2A2400C14 16GB

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Samsung M393B1G70BH0-YK0 8GB

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Dust Leopard DDR4-2400 C17 4GB 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Crucial Technology BL32G36C16U4BL.M16FB 32GB