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TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

TwinMOS 8DPT5MK8-TATP 2GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.8
    测试中的平均数值
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    48 left arrow 53
    左右 -10% 更低的延时
  • 更快的写入速度，GB/s
    15.7 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 48
  • 读取速度，GB/s
    3,726.4 left arrow 16.8
  • 写入速度，GB/s
    1,590.1 left arrow 15.7
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3047

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9965662-016.A00G 16GB
内存RAM