TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M471A1G43EB1-CRC 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Samsung M471A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M471A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 53

左右 -112% 更低的延时
更快的写入速度，GB/s

9.3 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M471A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 25
读取速度，GB/s

3,726.4 14.8
写入速度，GB/s

1,590.1 9.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BF160B.C16F 4GB

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Corsair CMK32GX4M2Z3200C16 16GB

Corsair CMK32GX4M2Z3200C16 16GB

Crucial Technology CT25664BA160B.C16F 2GB

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Crucial Technology CT16G4SFRA32A.C8FB 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905598-028.A00G 8GB

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Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMK128GX4M4A2400C16 32GB

Corsair CMK128GX4M4A2400C16 32GB

Samsung M4 70T2953EZ3-CE6 1GB

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Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB

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Samsung M471B5173DB0-YK0 4GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F4-3600C19-8GTZRB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB