Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B1G73BH0-CH9 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

总分
star star star star star
Samsung M471B1G73BH0-CH9 8GB

Samsung M471B1G73BH0-CH9 8GB

差异

  • 更快的读取速度,GB/s
    12 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    8.1 left arrow 6.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    29 left arrow 29
  • 读取速度,GB/s
    12.0 left arrow 10.8
  • 写入速度,GB/s
    8.1 left arrow 6.5
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2171 left arrow 1953
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较