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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB vs Samsung M471B1G73BH0-CH9 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB

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Samsung M471B1G73BH0-CH9 8GB

Samsung M471B1G73BH0-CH9 8GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12 left arrow 10.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 6.5
    Valore medio nei test
Samsung M471B1G73BH0-CH9 8GB Motivi da considerare
Samsung M471B1G73BH0-CH9 8GB
Segnala un bug

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB
Samsung M471B1G73BH0-CH9 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    29 left arrow 29
  • Velocità di lettura, GB/s
    12.0 left arrow 10.8
  • Velocità di scrittura, GB/s
    8.1 left arrow 6.5
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    2171 left arrow 1953

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8C-H9 8GB Confronto tra le RAM

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Samsung M471B1G73BH0-CH9 8GB Confronto tra le RAM

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Corsair CM4X8GF2666C18S2 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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