TwinMOS 9D7TCO4E-TATP 8GB vs Corsair CMW16GX4M2D3000C16 8GB

总分

TwinMOS 9D7TCO4E-TATP 8GB

TwinMOS 9D7TCO4E-TATP 8GB

总分

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

差异规格评论

差异

TwinMOS 9D7TCO4E-TATP 8GB

需要考虑的原因
TwinMOS 9D7TCO4E-TATP 8GB

报告一个错误

Corsair CMW16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMW16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 -3% 更低的延时
更快的读取速度，GB/s

16.5 13.1

测试中的平均数值
更快的写入速度，GB/s

13.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 9D7TCO4E-TATP 8GB

Corsair CMW16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 33
读取速度，GB/s

13.1 16.5
写入速度，GB/s

8.1 13.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2393 3298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

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TwinMOS 9D7TCO4E-TATP 8GB

TwinMOS 9D7TCO4E-TATP 8GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Kingston KHX2933C15D4/8GX 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Crucial Technology BLS4G4D240FSC.M8FADG 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905630-063.A00G 16GB

Kingston 9905630-063.A00G 16GB