TwinMOS 9DNPBNZB-TATP 4GB vs G Skill Intl F4-2400C17-8GNT 8GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

G Skill Intl F4-2400C17-8GNT 8GB

G Skill Intl F4-2400C17-8GNT 8GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

G Skill Intl F4-2400C17-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GNT 8GB

报告一个错误

更快的读取速度，GB/s

16.3 12.5

测试中的平均数值
更快的写入速度，GB/s

11.7 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

G Skill Intl F4-2400C17-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

12.5 16.3
写入速度，GB/s

8.4 11.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2180 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU502203EP0201 1GB

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Golden Empire CL16-18-18 D4-3200 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

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Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Kingston HP32D4U8S8ME-8XR 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Corsair CM4X16GE2133C15S2 16GB