TwinMOS 9DNPBNZB-TATP 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时
更快的读取速度，GB/s

12.5 10

测试中的平均数值
更快的写入速度，GB/s

8.4 7.0

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

12.5 10.0
写入速度，GB/s

8.4 7.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2180 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9905665-021.A00G 4GB

Kingston 9905665-021.A00G 4GB

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Samsung M3 93T5750CZA-CE6 2GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB