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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
19.4
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
96
左右 -200% 更低的延时
更快的写入速度,GB/s
16.3
1,336.0
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
32
读取速度,GB/s
2,725.2
19.4
写入速度,GB/s
1,336.0
16.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
438
3726
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT4G4DFS8213.C8FAR 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMD16GX4M2B3600C18 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M471A2K43EB1-CWE 16GB
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-2400C16-4GFX 4GB
A-DATA Technology VDQVE1B16 2GB
Lexar Co Limited LD4AS016G-H2666G 16GB
A-DATA Technology DQVE1908 512MB
Super Talent F24EB8GS 8GB
Kingston 9905403-090.A01LF 4GB
Mushkin 99[2/7/4]189F 4GB
Kingston KTC1G-UDIMM 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
AMD AE34G1601U1 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Avant Technology F641GU67F9333G 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
报告一个错误
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Bug description
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