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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CB8GS2400.C8JT 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CB8GS2400.C8JT 8GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.7
    测试中的平均数值
Crucial Technology CB8GS2400.C8JT 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8JT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 96
    左右 -174% 更低的延时
  • 更快的写入速度，GB/s
    12.3 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CB8GS2400.C8JT 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 35
  • 读取速度，GB/s
    2,725.2 left arrow 16.7
  • 写入速度，GB/s
    1,336.0 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 2933

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Crucial Technology CB8GS2400.C8JT 8GB RAM的比较

Kingston 9905678-138.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CB8GS2400.C8JT 8GB
Crucial Technology CB8GS2400.C8JT 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Essencore Limited KD4AGU88C-26N190A 16GB
Essencore Limited KD4AGU88C-26N190A 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-4000C18-32GTZR 32GB
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Kingston 9905701-017.A00G 16GB
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Corsair CMY8GX3M2A2666C10 4GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
Kingston 9905458-009.A00LF 2GB
Kingston 9905458-009.A00LF 2GB
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Kingston KF556C40-16 16GB
内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Kingston KHX3000C16D4/16GX 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905624-009.A00G 8GB
Kingston 9905624-009.A00G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
EVGA 16G-D3-1600-MR 8GB
EVGA 16G-D3-1600-MR 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM