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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CT8G4SFS824A.C8FJ 8GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Crucial Technology CT8G4SFS824A.C8FJ 8GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
14.3
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FJ 8GB
报告一个错误
低于PassMark测试中的延时,ns
62
96
左右 -55% 更低的延时
更快的写入速度,GB/s
11.0
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
62
读取速度,GB/s
2,725.2
14.3
写入速度,GB/s
1,336.0
11.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
2710
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905663-012.A00G 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905678-029.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905701-011.A00G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMD32GX4M4B3000C15 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMT16GX4M2C3600C18 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMSO4GX4M1A2133C15 4GB
Kingston KVT8FP-HYC 4GB
Corsair CMK8GX4M1D3000C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston ACR26D4U9S1KA-4 4GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Samsung M471A1K43BB1-CRC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C15-16GTZSW 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C15-16GTZKY 16GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
报告一个错误
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Bug description
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