Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Kingston 9965596-019.B01G 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

Kingston 9965596-019.B01G 4GB

需要考虑的原因
Kingston 9965596-019.B01G 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 96

左右 -146% 更低的延时
更快的读取速度，GB/s

7.6 2

测试中的平均数值
更快的写入速度，GB/s

7.2 1,336.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 9965596-019.B01G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 39
读取速度，GB/s

2,725.2 7.6
写入速度，GB/s

1,336.0 7.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

438 1868

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A1866C9 8GB

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G Skill Intl F4-3600C17-8GTRG 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Kingston 9965662-002.A01G 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

Samsung 1600 CL10 Series 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

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Crucial Technology CT8G4DFD8213.16FA11 8GB

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Samsung M393B5170FH0-CK0 4GB

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Corsair CM4X8GF2400C16K4 8GB

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Kingston 9905474-019.A00LF 2GB

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G Skill Intl F4-2933C14-16GTZRX 16GB

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Kingston 9905471-006.A01LF 4GB

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G Skill Intl F4-3600C19-8GSXK 8GB

G Skill Intl F4-3600C19-8GSXK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

DSL Memory D4SS12081SH21A-A 4GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB