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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Patriot Memory (PDP Systems) 3600 C18 Series 32GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.5
    测试中的平均数值
Patriot Memory (PDP Systems) 3600 C18 Series 32GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 96
    左右 -220% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 30
  • 读取速度，GB/s
    2,725.2 left arrow 18.5
  • 写入速度，GB/s
    1,336.0 left arrow 15.1
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    438 left arrow 3609

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB RAM的比较

Hexon Technology Pte Ltd HEXON 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905701-141.A00G 16GB
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TwinMOS 8DHE3MN8-HATP 2GB
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SK Hynix HMA84GR7AFR4N-UH 32GB
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SK Hynix HMT325S6CFR8C-H9 2GB
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TwinMOS 8DPT5MK8-TATP 2GB
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Ramaxel Technology RMSA3300MH78HBF-2666 16GB
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Corsair CMX4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F4-3200C16-8GSX 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Kingston 9905630-025.A00G 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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DSL Memory D4SH1G081SH26A-C 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
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