Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Corsair CMR16GX4M2C3000C16 8GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Corsair CMR16GX4M2C3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 44

左右 -52% 更低的延时
更快的读取速度，GB/s

18 10.9

测试中的平均数值
更快的写入速度，GB/s

13.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMR16GX4M2C3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 29
读取速度，GB/s

10.9 18.0
写入速度，GB/s

7.5 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 3371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSB.8FADG 4GB

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G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

Samsung M393B1G70BH0-CK0 8GB

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SK Hynix HMA451S6AFR8N-TF 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Kingston 9905403-038.A00LF 4GB

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Transcend Information TS2GSH64V4B 16GB

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