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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW16GX4M2C3200C16 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Corsair CMW16GX4M2C3200C16 8GB

总分
star star star star star
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分
star star star star star
Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

差异 规格 评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
Corsair CMW16GX4M2C3200C16 8GB 需要考虑的原因
Corsair CMW16GX4M2C3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 44
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW16GX4M2C3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 28
  • 读取速度，GB/s
    10.9 left arrow 18.4
  • 写入速度，GB/s
    7.5 left arrow 14.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1853 left arrow 3525

Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较

Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB

Corsair CMW16GX4M2C3200C16 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW16GX4M2C3200C16 8GB
Corsair CMW16GX4M2C3200C16 8GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Golden Empire CL16-18-18 D4-2666 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Gloway International (HK) STK4U2400D17041C 4GB
Gloway International (HK) STK4U2400D17041C 4GB
内存RAM
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F4-4000C16-8GVK 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
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Apacer Technology 78.C1GMS.C7Z0C 8GB
内存RAM