Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Team Group Inc. TEAMGROUP-UD4-3733 8GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

Team Group Inc. TEAMGROUP-UD4-3733 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-3733 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 44

左右 -110% 更低的延时
更快的读取速度，GB/s

18.4 10.9

测试中的平均数值
更快的写入速度，GB/s

14.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 21
读取速度，GB/s

10.9 18.4
写入速度，GB/s

7.5 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 3290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

EXCELERAM D48G8G8H8SS9CJRB22 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMT32GX4M2C3200C16 16GB

Corsair CMT32GX4M2C3200C16 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 99U5315-020.A00LF 512MB

Kingston 99U5315-020.A00LF 512MB