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Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5315-020.A00LF 512MB

Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 99U5315-020.A00LF 512MB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Kingston 99U5315-020.A00LF 512MB

Kingston 99U5315-020.A00LF 512MB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 48
    左右 4% 更低的延时
Kingston 99U5315-020.A00LF 512MB 需要考虑的原因
Kingston 99U5315-020.A00LF 512MB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,013.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 3200
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5315-020.A00LF 512MB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    46 left arrow 48
  • 读取速度，GB/s
    2,909.8 left arrow 4,187.1
  • 写入速度，GB/s
    1,519.2 left arrow 2,013.2
  • 内存带宽，mbps
    3200 left arrow 6400
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    241 left arrow 624

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Kingston 99U5315-020.A00LF 512MB RAM的比较

Corsair CMSX32GX4M2A3000C16 16GB
Crucial Technology CT4G4SFS824A.C8FE 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CM4B8G2J2133A15S 8GB
内存RAM
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Corsair CMY8GX3M2A2666C10 4GB
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Kingston 99U5471-056.A00LF 8GB
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内存RAM
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内存RAM
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G Skill Intl F4-4000C14-16GTZR 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM