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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
44
左右 -76% 更低的延时
更快的读取速度,GB/s
20.2
10.9
测试中的平均数值
更快的写入速度,GB/s
18.1
7.5
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
25
读取速度,GB/s
10.9
20.2
写入速度,GB/s
7.5
18.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1853
4046
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M474A4G43MB1-CTD 32GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905665-017.A00G 4GB
Kingston KHX318C10FR/8G 8GB
Gloway International (HK) STK4U2400D17081C 8GB
Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMA851S6CJR6N-VK 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston HP32D4U8D8HC-16XR 16GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905701-132.A00G 16GB
Kingston ACR16D3LS1NGG/4G 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M393A2K40CB2-CTD 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMT32GX4M2K4000C19 16GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMW32GX4M4D3600C18 8GB
Samsung M393B2G70BH0-CK0 16GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
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