Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Crucial Technology BLS16G4D240FSB.16FBD 16GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Crucial Technology BLS16G4D240FSB.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBD 16GB

报告一个错误

更快的读取速度，GB/s

15.9 12.6

测试中的平均数值
更快的写入速度，GB/s

9.8 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

12.6 15.9
写入速度，GB/s

7.2 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2051 2881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5270CH0-CH9 4GB

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Avant Technology J642GU44J2320ND 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL8G24C16U4B.8FB 8GB

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Corsair CMZ8GX3M1A1600C10 8GB

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Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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SK Hynix GKE800SO51208-2133AH 8GB

SK Hynix GKE800SO51208-2133AH 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMW64GX4M8C3466C16 8GB

Corsair CMW64GX4M8C3466C16 8GB