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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
更快的写入速度,GB/s
7.2
6.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 -4% 更低的延时
更快的读取速度,GB/s
12.7
12.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
24
读取速度,GB/s
12.6
12.7
写入速度,GB/s
7.2
6.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2051
2256
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M3 78T3354BZ0-CCC 256MB
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Kingston 99U5584-001.A00LF 4GB
Micron Technology AFLD48VH1P 8GB
报告一个错误
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