RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1 auswählen
RAM 2 auswählen
Vergleichen Sie
DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
2501
RAM
Nanya Technology NT2GT72U8PD2BD-3C 2GB
Latency
111
Read speed
2,685.9
Write speed
2,014.5
№
2502
RAM
Nanya Technology NT4GT72U4ND1BD-3C 2GB
Latency
111
Read speed
2,879.3
Write speed
2,098.6
№
2503
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7EMR4C-Y5D5 4GB
Latency
111
Read speed
2,898.8
Write speed
2,224.4
№
2504
RAM
Hynix Semiconductor (Hyundai Electronics) HY5PS2G PC6400 2GB
Latency
111
Read speed
2,276.2
Write speed
1,038.7
№
2505
RAM
Qimonda 72T128420HFN3.7A 1GB
Latency
111
Read speed
2,810.4
Write speed
1,748.9
№
2506
RAM
Samsung M395T6553EZ4-CE61 512MB
Latency
111
Read speed
2,599.4
Write speed
1,591.1
№
2507
RAM
Micron Technology 36HTF51272PY-80EE1 4GB
Latency
111
Read speed
3,097.1
Write speed
3,388.5
№
2508
RAM
Apacer Technology 78.A1GA0.9L4 2GB
Latency
111
Read speed
3,884.4
Write speed
1,765.7
№
2509
RAM
Qimonda HYS72T512420EFA-3S 4GB
Latency
111
Read speed
2,839.2
Write speed
2,217.3
№
2510
RAM
Nanya Technology HYS72T512420EFD-3s 4GB
Latency
111
Read speed
2,597.4
Write speed
2,064.6
№
2511
RAM
Elpida EBE82FF4A1RQ-6E-E 8GB
Latency
111
Read speed
2,737.2
Write speed
2,091.0
№
2512
RAM
A-DATA Technology SC2PE1B18 1GB
Latency
112
Read speed
3,215.1
Write speed
2,402.3
№
2513
RAM
Nanya Technology NT1GT72U8PA3BD-3C 1GB
Latency
112
Read speed
2,840.8
Write speed
2,214.5
№
2514
RAM
Nanya Technology NT2GT72U4NA1BD-3C 2GB
Latency
112
Read speed
2,843.5
Write speed
2,216.5
№
2515
RAM
Nanya Technology NT4GTT72U4PB1UD-2D 4GB
Latency
112
Read speed
2,862.1
Write speed
2,231.6
№
2516
RAM
Micron Technology 18HF12872FD667B5E3 1GB
Latency
112
Read speed
3,109.7
Write speed
1,836.0
№
2517
RAM
Samsung M395T2953CZ4-CE65 1GB
Latency
112
Read speed
3,008.8
Write speed
1,702.7
№
2518
RAM
Qimonda 72T256020HFN3.7A 2GB
Latency
112
Read speed
2,994.9
Write speed
1,808.9
№
2519
RAM
Infineon (Siemens) 72T128020HFN3.7A 1GB
Latency
113
Read speed
3,022.4
Write speed
1,565.8
№
2520
RAM
Samsung M3 93T5166AZA-CE6 4GB
Latency
113
Read speed
2,073.4
Write speed
2,070.5
«
123
124
125
126
127
128
»
Letzte Vergleiche
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston 9965745-002.A00G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C14-8GFX 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2C3333C16 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905663-005.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905712-008.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP26D4S9S1ME-4 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3600C17-4GVK 4GB
Samsung M393B1G70BH0-CK0 8GB
Kingston HP24D4U7S8MH-8 8GB
AMD AE34G1601U1 4GB
Corsair CMK8GX4M1A2400C14 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston 9905633-017.A00G 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMT32GX4M4C3600C18 8GB
Einen Fehler melden
×
Bug description
Source link
Русский 
English 
Español 
Português 
Français 
Italiano 
Polski 
中文 
日本語 
