RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Выберите RAM 1
Выберите RAM 2
Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2501
RAM
Nanya Technology NT2GT72U8PD2BD-3C 2GB
Latency
111
Read speed
2,685.9
Write speed
2,014.5
№
2502
RAM
Nanya Technology NT4GT72U4ND1BD-3C 2GB
Latency
111
Read speed
2,879.3
Write speed
2,098.6
№
2503
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7EMR4C-Y5D5 4GB
Latency
111
Read speed
2,898.8
Write speed
2,224.4
№
2504
RAM
Hynix Semiconductor (Hyundai Electronics) HY5PS2G PC6400 2GB
Latency
111
Read speed
2,276.2
Write speed
1,038.7
№
2505
RAM
Qimonda 72T128420HFN3.7A 1GB
Latency
111
Read speed
2,810.4
Write speed
1,748.9
№
2506
RAM
Samsung M395T6553EZ4-CE61 512MB
Latency
111
Read speed
2,599.4
Write speed
1,591.1
№
2507
RAM
Micron Technology 36HTF51272PY-80EE1 4GB
Latency
111
Read speed
3,097.1
Write speed
3,388.5
№
2508
RAM
Apacer Technology 78.A1GA0.9L4 2GB
Latency
111
Read speed
3,884.4
Write speed
1,765.7
№
2509
RAM
Qimonda HYS72T512420EFA-3S 4GB
Latency
111
Read speed
2,839.2
Write speed
2,217.3
№
2510
RAM
Nanya Technology HYS72T512420EFD-3s 4GB
Latency
111
Read speed
2,597.4
Write speed
2,064.6
№
2511
RAM
Elpida EBE82FF4A1RQ-6E-E 8GB
Latency
111
Read speed
2,737.2
Write speed
2,091.0
№
2512
RAM
A-DATA Technology SC2PE1B18 1GB
Latency
112
Read speed
3,215.1
Write speed
2,402.3
№
2513
RAM
Nanya Technology NT1GT72U8PA3BD-3C 1GB
Latency
112
Read speed
2,840.8
Write speed
2,214.5
№
2514
RAM
Nanya Technology NT2GT72U4NA1BD-3C 2GB
Latency
112
Read speed
2,843.5
Write speed
2,216.5
№
2515
RAM
Nanya Technology NT4GTT72U4PB1UD-2D 4GB
Latency
112
Read speed
2,862.1
Write speed
2,231.6
№
2516
RAM
Micron Technology 18HF12872FD667B5E3 1GB
Latency
112
Read speed
3,109.7
Write speed
1,836.0
№
2517
RAM
Samsung M395T2953CZ4-CE65 1GB
Latency
112
Read speed
3,008.8
Write speed
1,702.7
№
2518
RAM
Qimonda 72T256020HFN3.7A 2GB
Latency
112
Read speed
2,994.9
Write speed
1,808.9
№
2519
RAM
Infineon (Siemens) 72T128020HFN3.7A 1GB
Latency
113
Read speed
3,022.4
Write speed
1,565.8
№
2520
RAM
Samsung M3 93T5166AZA-CE6 4GB
Latency
113
Read speed
2,073.4
Write speed
2,070.5
«
123
124
125
126
127
128
»
Последние сравнения
Ramos Technology EWB8GB681CA3-16IC 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Kingston 9905403-156.A00LF 2GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
PNY Electronics PNY 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
Samsung M393B2G70BH0-CK0 16GB
Transcend Information TS1GLH64V4B 8GB
Samsung M378B5773DH0-CH9 2GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-3200C14-8GVR 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Corsair CM5S16GM4800A40K2 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
A-DATA Technology AM1P26KC4U1-BACS 4GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD16GX4M4B3333C16 4GB
Сообщить об ошибке
×
Bug description
Source link
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
