RAM
DDR5
DDR4
DDR3
DDR2
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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2501
RAM
Nanya Technology NT2GT72U8PD2BD-3C 2GB
Latency
111
Read speed
2,685.9
Write speed
2,014.5
№
2502
RAM
Nanya Technology NT4GT72U4ND1BD-3C 2GB
Latency
111
Read speed
2,879.3
Write speed
2,098.6
№
2503
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7EMR4C-Y5D5 4GB
Latency
111
Read speed
2,898.8
Write speed
2,224.4
№
2504
RAM
Hynix Semiconductor (Hyundai Electronics) HY5PS2G PC6400 2GB
Latency
111
Read speed
2,276.2
Write speed
1,038.7
№
2505
RAM
Qimonda 72T128420HFN3.7A 1GB
Latency
111
Read speed
2,810.4
Write speed
1,748.9
№
2506
RAM
Samsung M395T6553EZ4-CE61 512MB
Latency
111
Read speed
2,599.4
Write speed
1,591.1
№
2507
RAM
Micron Technology 36HTF51272PY-80EE1 4GB
Latency
111
Read speed
3,097.1
Write speed
3,388.5
№
2508
RAM
Apacer Technology 78.A1GA0.9L4 2GB
Latency
111
Read speed
3,884.4
Write speed
1,765.7
№
2509
RAM
Qimonda HYS72T512420EFA-3S 4GB
Latency
111
Read speed
2,839.2
Write speed
2,217.3
№
2510
RAM
Nanya Technology HYS72T512420EFD-3s 4GB
Latency
111
Read speed
2,597.4
Write speed
2,064.6
№
2511
RAM
Elpida EBE82FF4A1RQ-6E-E 8GB
Latency
111
Read speed
2,737.2
Write speed
2,091.0
№
2512
RAM
A-DATA Technology SC2PE1B18 1GB
Latency
112
Read speed
3,215.1
Write speed
2,402.3
№
2513
RAM
Nanya Technology NT1GT72U8PA3BD-3C 1GB
Latency
112
Read speed
2,840.8
Write speed
2,214.5
№
2514
RAM
Nanya Technology NT2GT72U4NA1BD-3C 2GB
Latency
112
Read speed
2,843.5
Write speed
2,216.5
№
2515
RAM
Nanya Technology NT4GTT72U4PB1UD-2D 4GB
Latency
112
Read speed
2,862.1
Write speed
2,231.6
№
2516
RAM
Micron Technology 18HF12872FD667B5E3 1GB
Latency
112
Read speed
3,109.7
Write speed
1,836.0
№
2517
RAM
Samsung M395T2953CZ4-CE65 1GB
Latency
112
Read speed
3,008.8
Write speed
1,702.7
№
2518
RAM
Qimonda 72T256020HFN3.7A 2GB
Latency
112
Read speed
2,994.9
Write speed
1,808.9
№
2519
RAM
Infineon (Siemens) 72T128020HFN3.7A 1GB
Latency
113
Read speed
3,022.4
Write speed
1,565.8
№
2520
RAM
Samsung M3 93T5166AZA-CE6 4GB
Latency
113
Read speed
2,073.4
Write speed
2,070.5
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Najnowsze porównania
Kingston KN2M64-ETB 8GB
G Skill Intl F4-3200C16-8GTZ 8GB
AMD R5S38G1601U2S 8GB
Golden Empire CL18-20-20 D4-3200 8GB
Kingston 99U5474-022.A00LF 2GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMD32GX4M4C3200C14C 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3866C18-4GVK 4GB
Kingston 99U5428-040.A00LF 4GB
Corsair CMK16GX4M2C3000C16 8GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Samsung M378B5773DH0-CH9 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Samsung M393B5170FH0-CK0 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston HP37D4U1S8ME-8X 8GB
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