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DDR2 RAM list
All memory modules, sorted by increasing latency
№
Bandwidth
Latency, ns
Read speed, GB/s
Write speed, GB/s
№
2501
RAM
Nanya Technology NT2GT72U8PD2BD-3C 2GB
Latency
111
Read speed
2,685.9
Write speed
2,014.5
№
2502
RAM
Nanya Technology NT4GT72U4ND1BD-3C 2GB
Latency
111
Read speed
2,879.3
Write speed
2,098.6
№
2503
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7EMR4C-Y5D5 4GB
Latency
111
Read speed
2,898.8
Write speed
2,224.4
№
2504
RAM
Hynix Semiconductor (Hyundai Electronics) HY5PS2G PC6400 2GB
Latency
111
Read speed
2,276.2
Write speed
1,038.7
№
2505
RAM
Qimonda 72T128420HFN3.7A 1GB
Latency
111
Read speed
2,810.4
Write speed
1,748.9
№
2506
RAM
Samsung M395T6553EZ4-CE61 512MB
Latency
111
Read speed
2,599.4
Write speed
1,591.1
№
2507
RAM
Micron Technology 36HTF51272PY-80EE1 4GB
Latency
111
Read speed
3,097.1
Write speed
3,388.5
№
2508
RAM
Apacer Technology 78.A1GA0.9L4 2GB
Latency
111
Read speed
3,884.4
Write speed
1,765.7
№
2509
RAM
Qimonda HYS72T512420EFA-3S 4GB
Latency
111
Read speed
2,839.2
Write speed
2,217.3
№
2510
RAM
Nanya Technology HYS72T512420EFD-3s 4GB
Latency
111
Read speed
2,597.4
Write speed
2,064.6
№
2511
RAM
Elpida EBE82FF4A1RQ-6E-E 8GB
Latency
111
Read speed
2,737.2
Write speed
2,091.0
№
2512
RAM
A-DATA Technology SC2PE1B18 1GB
Latency
112
Read speed
3,215.1
Write speed
2,402.3
№
2513
RAM
Nanya Technology NT1GT72U8PA3BD-3C 1GB
Latency
112
Read speed
2,840.8
Write speed
2,214.5
№
2514
RAM
Nanya Technology NT2GT72U4NA1BD-3C 2GB
Latency
112
Read speed
2,843.5
Write speed
2,216.5
№
2515
RAM
Nanya Technology NT4GTT72U4PB1UD-2D 4GB
Latency
112
Read speed
2,862.1
Write speed
2,231.6
№
2516
RAM
Micron Technology 18HF12872FD667B5E3 1GB
Latency
112
Read speed
3,109.7
Write speed
1,836.0
№
2517
RAM
Samsung M395T2953CZ4-CE65 1GB
Latency
112
Read speed
3,008.8
Write speed
1,702.7
№
2518
RAM
Qimonda 72T256020HFN3.7A 2GB
Latency
112
Read speed
2,994.9
Write speed
1,808.9
№
2519
RAM
Infineon (Siemens) 72T128020HFN3.7A 1GB
Latency
113
Read speed
3,022.4
Write speed
1,565.8
№
2520
RAM
Samsung M3 93T5166AZA-CE6 4GB
Latency
113
Read speed
2,073.4
Write speed
2,070.5
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Latest comparisons
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C15-8GTZSK 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA42GR7AFR4N-UH 16GB
AMD AE34G1601U1 4GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Corsair VS1GB800D2 1GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Kingston 9965525-155.A00LF 8GB
Team Group Inc. TEAMGROUP-UD4-3000 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Avant Technology W641GU42J5213NC 8GB
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Corsair CMX8GX3M2A1600C11 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Kingston 99U5474-025.A00LF 2GB
Samsung M378B5773CH0-CH9 2GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Mushkin 99[2/7/4]192F 4GB
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