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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2501
RAM
Nanya Technology NT2GT72U8PD2BD-3C 2GB
Latency
111
Read speed
2,685.9
Write speed
2,014.5
№
2502
RAM
Nanya Technology NT4GT72U4ND1BD-3C 2GB
Latency
111
Read speed
2,879.3
Write speed
2,098.6
№
2503
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7EMR4C-Y5D5 4GB
Latency
111
Read speed
2,898.8
Write speed
2,224.4
№
2504
RAM
Hynix Semiconductor (Hyundai Electronics) HY5PS2G PC6400 2GB
Latency
111
Read speed
2,276.2
Write speed
1,038.7
№
2505
RAM
Qimonda 72T128420HFN3.7A 1GB
Latency
111
Read speed
2,810.4
Write speed
1,748.9
№
2506
RAM
Samsung M395T6553EZ4-CE61 512MB
Latency
111
Read speed
2,599.4
Write speed
1,591.1
№
2507
RAM
Micron Technology 36HTF51272PY-80EE1 4GB
Latency
111
Read speed
3,097.1
Write speed
3,388.5
№
2508
RAM
Apacer Technology 78.A1GA0.9L4 2GB
Latency
111
Read speed
3,884.4
Write speed
1,765.7
№
2509
RAM
Qimonda HYS72T512420EFA-3S 4GB
Latency
111
Read speed
2,839.2
Write speed
2,217.3
№
2510
RAM
Nanya Technology HYS72T512420EFD-3s 4GB
Latency
111
Read speed
2,597.4
Write speed
2,064.6
№
2511
RAM
Elpida EBE82FF4A1RQ-6E-E 8GB
Latency
111
Read speed
2,737.2
Write speed
2,091.0
№
2512
RAM
A-DATA Technology SC2PE1B18 1GB
Latency
112
Read speed
3,215.1
Write speed
2,402.3
№
2513
RAM
Nanya Technology NT1GT72U8PA3BD-3C 1GB
Latency
112
Read speed
2,840.8
Write speed
2,214.5
№
2514
RAM
Nanya Technology NT2GT72U4NA1BD-3C 2GB
Latency
112
Read speed
2,843.5
Write speed
2,216.5
№
2515
RAM
Nanya Technology NT4GTT72U4PB1UD-2D 4GB
Latency
112
Read speed
2,862.1
Write speed
2,231.6
№
2516
RAM
Micron Technology 18HF12872FD667B5E3 1GB
Latency
112
Read speed
3,109.7
Write speed
1,836.0
№
2517
RAM
Samsung M395T2953CZ4-CE65 1GB
Latency
112
Read speed
3,008.8
Write speed
1,702.7
№
2518
RAM
Qimonda 72T256020HFN3.7A 2GB
Latency
112
Read speed
2,994.9
Write speed
1,808.9
№
2519
RAM
Infineon (Siemens) 72T128020HFN3.7A 1GB
Latency
113
Read speed
3,022.4
Write speed
1,565.8
№
2520
RAM
Samsung M3 93T5166AZA-CE6 4GB
Latency
113
Read speed
2,073.4
Write speed
2,070.5
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Últimas comparações
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M4C3400C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2400 C17 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-3200C16-16GTZSW 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F5-6400J3239G16G 16GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905664-010.A00G 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M2A2400C16 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Ramos Technology RMB4GB58BCA4-13HC 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston KHX2400C15/8G 8GB
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