RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1081
RAM
Nanya Technology NT2GT64U8HC0BN-AD 2GB
Latency
57
Read speed
4,373.3
Write speed
1,898.6
№
1082
RAM
takeMS International AG TMS2GB264D081-805G 2GB
Latency
57
Read speed
3,759.3
Write speed
2,383.4
№
1083
RAM
Golden Empire CL6-6-6DDR21066 6 2GB
Latency
57
Read speed
4,743.8
Write speed
2,360.6
№
1084
RAM
Crucial Technology CT25664AA667.K16F 2GB
Latency
57
Read speed
4,465.8
Write speed
2,095.4
№
1085
RAM
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Latency
57
Read speed
4,456.3
Write speed
2,141.2
№
1086
RAM
Micron Technology 18HF12872FD667F1D4 1GB
Latency
57
Read speed
3,090.8
Write speed
1,966.9
№
1087
RAM
takeMS International AG TMS2GB264D082805AP 2GB
Latency
57
Read speed
3,805.4
Write speed
2,020.3
№
1088
RAM
Kingston KHX5300S2LL/2G 2GB
Latency
57
Read speed
3,720.7
Write speed
1,502.7
№
1089
RAM
Micron Technology 18HF12872JD667D6D4 1GB
Latency
57
Read speed
3,436.8
Write speed
2,046.7
№
1090
RAM
Hynix Semiconductor (Hyundai Electronics) DMP112U6EFR6C-S6DD 1GB
Latency
57
Read speed
4,189.6
Write speed
1,705.6
№
1091
RAM
Hynix Semiconductor (Hyundai Electronics) DMP125U6
Latency
57
Read speed
4,292.7
Write speed
1,800.4
№
1092
RAM
Kingmax Semiconductor KLDE88F-B8NU5 2GB
Latency
57
Read speed
4,322.0
Write speed
2,168.8
№
1093
RAM
Samsung M395T5166AZ4-CE65 4GB
Latency
57
Read speed
2,824.1
Write speed
1,784.5
№
1094
RAM
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Latency
57
Read speed
4,671.5
Write speed
2,312.6
№
1095
RAM
Kingmax Semiconductor KSCD48F-B8KB5 1GB
Latency
57
Read speed
3,415.3
Write speed
1,546.7
№
1096
RAM
takeMS – Ultron AG TMS2GB264D081805EP 2GB
Latency
57
Read speed
3,900.6
Write speed
2,587.1
№
1097
RAM
Crucial Technology CT25664AC800.C16FM 2GB
Latency
57
Read speed
3,998.1
Write speed
1,680.7
№
1098
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5D3 1GB
Latency
57
Read speed
2,767.1
Write speed
2,140.5
№
1099
RAM
Netlist NL8126426407F-D53M 1GB
Latency
57
Read speed
3,846.1
Write speed
1,681.6
№
1100
RAM
Hynix Semiconductor (Hyundai Electronics) HMP525F7FFP4C-Y5N3 2GB
Latency
57
Read speed
3,233.2
Write speed
2,179.8
«
52
53
54
55
56
57
»
Últimas comparaciones
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M393A1G43EB1-CRC 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 16ATF2G64HZ-2G3A1 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Teclast TLD416G26A30 16GB
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-2400C16-8GFX 8GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2133C15-16GVR 16GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73BH0-CK0 8GB
Kingston 9965516-112.A00LF 16GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
A-DATA Technology DDR3 1600 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
A-DATA Technology VDQVE1B16 2GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Informar de un error
×
Bug description
Source link