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比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
1081
RAM
Nanya Technology NT2GT64U8HC0BN-AD 2GB
Latency
57
Read speed
4,373.3
Write speed
1,898.6
№
1082
RAM
takeMS International AG TMS2GB264D081-805G 2GB
Latency
57
Read speed
3,759.3
Write speed
2,383.4
№
1083
RAM
Golden Empire CL6-6-6DDR21066 6 2GB
Latency
57
Read speed
4,743.8
Write speed
2,360.6
№
1084
RAM
Crucial Technology CT25664AA667.K16F 2GB
Latency
57
Read speed
4,465.8
Write speed
2,095.4
№
1085
RAM
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Latency
57
Read speed
4,456.3
Write speed
2,141.2
№
1086
RAM
Micron Technology 18HF12872FD667F1D4 1GB
Latency
57
Read speed
3,090.8
Write speed
1,966.9
№
1087
RAM
takeMS International AG TMS2GB264D082805AP 2GB
Latency
57
Read speed
3,805.4
Write speed
2,020.3
№
1088
RAM
Kingston KHX5300S2LL/2G 2GB
Latency
57
Read speed
3,720.7
Write speed
1,502.7
№
1089
RAM
Micron Technology 18HF12872JD667D6D4 1GB
Latency
57
Read speed
3,436.8
Write speed
2,046.7
№
1090
RAM
Hynix Semiconductor (Hyundai Electronics) DMP112U6EFR6C-S6DD 1GB
Latency
57
Read speed
4,189.6
Write speed
1,705.6
№
1091
RAM
Hynix Semiconductor (Hyundai Electronics) DMP125U6
Latency
57
Read speed
4,292.7
Write speed
1,800.4
№
1092
RAM
Kingmax Semiconductor KLDE88F-B8NU5 2GB
Latency
57
Read speed
4,322.0
Write speed
2,168.8
№
1093
RAM
Samsung M395T5166AZ4-CE65 4GB
Latency
57
Read speed
2,824.1
Write speed
1,784.5
№
1094
RAM
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Latency
57
Read speed
4,671.5
Write speed
2,312.6
№
1095
RAM
Kingmax Semiconductor KSCD48F-B8KB5 1GB
Latency
57
Read speed
3,415.3
Write speed
1,546.7
№
1096
RAM
takeMS – Ultron AG TMS2GB264D081805EP 2GB
Latency
57
Read speed
3,900.6
Write speed
2,587.1
№
1097
RAM
Crucial Technology CT25664AC800.C16FM 2GB
Latency
57
Read speed
3,998.1
Write speed
1,680.7
№
1098
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5D3 1GB
Latency
57
Read speed
2,767.1
Write speed
2,140.5
№
1099
RAM
Netlist NL8126426407F-D53M 1GB
Latency
57
Read speed
3,846.1
Write speed
1,681.6
№
1100
RAM
Hynix Semiconductor (Hyundai Electronics) HMP525F7FFP4C-Y5N3 2GB
Latency
57
Read speed
3,233.2
Write speed
2,179.8
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最新比较
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
AMD R534G1601U1S-UO 4GB
Kingston KMKYF9-HYA 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CMT32GX4M2C3000C15 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix HMA851U6JJR6N-VK 4GB
Kingston 99U5403-036.A00G 4GB
Corsair CMK16GX4M2B3200C16 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Samsung M471B5773DH0-CH9 2GB
Kingston MSI32D4S2S1ME-8 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
Kingston 9905403-156.A00LF 2GB
Kingston KMKYF9-HYA 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMK16GX4M2K4333C19 8GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK32GX4M2A2666C16 16GB
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