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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
1081
RAM
Nanya Technology NT2GT64U8HC0BN-AD 2GB
Latency
57
Read speed
4,373.3
Write speed
1,898.6
№
1082
RAM
takeMS International AG TMS2GB264D081-805G 2GB
Latency
57
Read speed
3,759.3
Write speed
2,383.4
№
1083
RAM
Golden Empire CL6-6-6DDR21066 6 2GB
Latency
57
Read speed
4,743.8
Write speed
2,360.6
№
1084
RAM
Crucial Technology CT25664AA667.K16F 2GB
Latency
57
Read speed
4,465.8
Write speed
2,095.4
№
1085
RAM
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Latency
57
Read speed
4,456.3
Write speed
2,141.2
№
1086
RAM
Micron Technology 18HF12872FD667F1D4 1GB
Latency
57
Read speed
3,090.8
Write speed
1,966.9
№
1087
RAM
takeMS International AG TMS2GB264D082805AP 2GB
Latency
57
Read speed
3,805.4
Write speed
2,020.3
№
1088
RAM
Kingston KHX5300S2LL/2G 2GB
Latency
57
Read speed
3,720.7
Write speed
1,502.7
№
1089
RAM
Micron Technology 18HF12872JD667D6D4 1GB
Latency
57
Read speed
3,436.8
Write speed
2,046.7
№
1090
RAM
Hynix Semiconductor (Hyundai Electronics) DMP112U6EFR6C-S6DD 1GB
Latency
57
Read speed
4,189.6
Write speed
1,705.6
№
1091
RAM
Hynix Semiconductor (Hyundai Electronics) DMP125U6
Latency
57
Read speed
4,292.7
Write speed
1,800.4
№
1092
RAM
Kingmax Semiconductor KLDE88F-B8NU5 2GB
Latency
57
Read speed
4,322.0
Write speed
2,168.8
№
1093
RAM
Samsung M395T5166AZ4-CE65 4GB
Latency
57
Read speed
2,824.1
Write speed
1,784.5
№
1094
RAM
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Latency
57
Read speed
4,671.5
Write speed
2,312.6
№
1095
RAM
Kingmax Semiconductor KSCD48F-B8KB5 1GB
Latency
57
Read speed
3,415.3
Write speed
1,546.7
№
1096
RAM
takeMS – Ultron AG TMS2GB264D081805EP 2GB
Latency
57
Read speed
3,900.6
Write speed
2,587.1
№
1097
RAM
Crucial Technology CT25664AC800.C16FM 2GB
Latency
57
Read speed
3,998.1
Write speed
1,680.7
№
1098
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5D3 1GB
Latency
57
Read speed
2,767.1
Write speed
2,140.5
№
1099
RAM
Netlist NL8126426407F-D53M 1GB
Latency
57
Read speed
3,846.1
Write speed
1,681.6
№
1100
RAM
Hynix Semiconductor (Hyundai Electronics) HMP525F7FFP4C-Y5N3 2GB
Latency
57
Read speed
3,233.2
Write speed
2,179.8
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Последние сравнения
Samsung M378B5273CH0-CH9 4GB
Apacer Technology 78.B1GQB.4010B 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Mushkin MRA4S320GJJM32G 32GB
Kingston KHX3200C18D4/8G 8GB
Samsung M392A4K40BM0-CRC 32GB
Kingston KVR533D2N4 512MB
Panram International Corporation PUD43000C154G4NJW 4GB
A-DATA Technology DDR3 1600 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT128GX4M8X3600C18 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston MSI24D4U7D8MH-16 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston MSI24D4S7D8MH-16 16GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3333C16-4GRRD 4GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M471A2K43CB1-CRC 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
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