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DDR2 RAMリスト
すべてのメモリモジュール、レイテンシーの高い順に並べ替え
№
帯域幅
レイテンシー、ns
読み出し速度、GB/s
書き込み速度、GB/秒
№
1081
RAM
Nanya Technology NT2GT64U8HC0BN-AD 2GB
Latency
57
Read speed
4,373.3
Write speed
1,898.6
№
1082
RAM
takeMS International AG TMS2GB264D081-805G 2GB
Latency
57
Read speed
3,759.3
Write speed
2,383.4
№
1083
RAM
Golden Empire CL6-6-6DDR21066 6 2GB
Latency
57
Read speed
4,743.8
Write speed
2,360.6
№
1084
RAM
Crucial Technology CT25664AA667.K16F 2GB
Latency
57
Read speed
4,465.8
Write speed
2,095.4
№
1085
RAM
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Latency
57
Read speed
4,456.3
Write speed
2,141.2
№
1086
RAM
Micron Technology 18HF12872FD667F1D4 1GB
Latency
57
Read speed
3,090.8
Write speed
1,966.9
№
1087
RAM
takeMS International AG TMS2GB264D082805AP 2GB
Latency
57
Read speed
3,805.4
Write speed
2,020.3
№
1088
RAM
Kingston KHX5300S2LL/2G 2GB
Latency
57
Read speed
3,720.7
Write speed
1,502.7
№
1089
RAM
Micron Technology 18HF12872JD667D6D4 1GB
Latency
57
Read speed
3,436.8
Write speed
2,046.7
№
1090
RAM
Hynix Semiconductor (Hyundai Electronics) DMP112U6EFR6C-S6DD 1GB
Latency
57
Read speed
4,189.6
Write speed
1,705.6
№
1091
RAM
Hynix Semiconductor (Hyundai Electronics) DMP125U6
Latency
57
Read speed
4,292.7
Write speed
1,800.4
№
1092
RAM
Kingmax Semiconductor KLDE88F-B8NU5 2GB
Latency
57
Read speed
4,322.0
Write speed
2,168.8
№
1093
RAM
Samsung M395T5166AZ4-CE65 4GB
Latency
57
Read speed
2,824.1
Write speed
1,784.5
№
1094
RAM
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Latency
57
Read speed
4,671.5
Write speed
2,312.6
№
1095
RAM
Kingmax Semiconductor KSCD48F-B8KB5 1GB
Latency
57
Read speed
3,415.3
Write speed
1,546.7
№
1096
RAM
takeMS – Ultron AG TMS2GB264D081805EP 2GB
Latency
57
Read speed
3,900.6
Write speed
2,587.1
№
1097
RAM
Crucial Technology CT25664AC800.C16FM 2GB
Latency
57
Read speed
3,998.1
Write speed
1,680.7
№
1098
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5D3 1GB
Latency
57
Read speed
2,767.1
Write speed
2,140.5
№
1099
RAM
Netlist NL8126426407F-D53M 1GB
Latency
57
Read speed
3,846.1
Write speed
1,681.6
№
1100
RAM
Hynix Semiconductor (Hyundai Electronics) HMP525F7FFP4C-Y5N3 2GB
Latency
57
Read speed
3,233.2
Write speed
2,179.8
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最新の比較
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Kingston KF3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston LV26D4S9S8HJ-8 8GB
A-DATA Technology AD73I1C1674EV 4GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
Samsung M386B4G70DM0-CMA4 32GB
Panram International Corporation D4U2666P-8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
UMAX Technology 16GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMT16GX4M2C3200C14 8GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Corsair CML8GX3M2A1600C9 4GB
Avant Technology J642GU42J9266NF 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CMW16GX4M2Z4600C18 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
A-DATA Technology AD73I1B1672EG 2GB
Avant Technology W641GU42J5213N3 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C16-16GSXWB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
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