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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
1081
RAM
Nanya Technology NT2GT64U8HC0BN-AD 2GB
Latency
57
Read speed
4,373.3
Write speed
1,898.6
№
1082
RAM
takeMS International AG TMS2GB264D081-805G 2GB
Latency
57
Read speed
3,759.3
Write speed
2,383.4
№
1083
RAM
Golden Empire CL6-6-6DDR21066 6 2GB
Latency
57
Read speed
4,743.8
Write speed
2,360.6
№
1084
RAM
Crucial Technology CT25664AA667.K16F 2GB
Latency
57
Read speed
4,465.8
Write speed
2,095.4
№
1085
RAM
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Latency
57
Read speed
4,456.3
Write speed
2,141.2
№
1086
RAM
Micron Technology 18HF12872FD667F1D4 1GB
Latency
57
Read speed
3,090.8
Write speed
1,966.9
№
1087
RAM
takeMS International AG TMS2GB264D082805AP 2GB
Latency
57
Read speed
3,805.4
Write speed
2,020.3
№
1088
RAM
Kingston KHX5300S2LL/2G 2GB
Latency
57
Read speed
3,720.7
Write speed
1,502.7
№
1089
RAM
Micron Technology 18HF12872JD667D6D4 1GB
Latency
57
Read speed
3,436.8
Write speed
2,046.7
№
1090
RAM
Hynix Semiconductor (Hyundai Electronics) DMP112U6EFR6C-S6DD 1GB
Latency
57
Read speed
4,189.6
Write speed
1,705.6
№
1091
RAM
Hynix Semiconductor (Hyundai Electronics) DMP125U6
Latency
57
Read speed
4,292.7
Write speed
1,800.4
№
1092
RAM
Kingmax Semiconductor KLDE88F-B8NU5 2GB
Latency
57
Read speed
4,322.0
Write speed
2,168.8
№
1093
RAM
Samsung M395T5166AZ4-CE65 4GB
Latency
57
Read speed
2,824.1
Write speed
1,784.5
№
1094
RAM
Hynix Semiconductor (Hyundai Electronics) HMP351U7AFR8C-S6 4GB
Latency
57
Read speed
4,671.5
Write speed
2,312.6
№
1095
RAM
Kingmax Semiconductor KSCD48F-B8KB5 1GB
Latency
57
Read speed
3,415.3
Write speed
1,546.7
№
1096
RAM
takeMS – Ultron AG TMS2GB264D081805EP 2GB
Latency
57
Read speed
3,900.6
Write speed
2,587.1
№
1097
RAM
Crucial Technology CT25664AC800.C16FM 2GB
Latency
57
Read speed
3,998.1
Write speed
1,680.7
№
1098
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5D3 1GB
Latency
57
Read speed
2,767.1
Write speed
2,140.5
№
1099
RAM
Netlist NL8126426407F-D53M 1GB
Latency
57
Read speed
3,846.1
Write speed
1,681.6
№
1100
RAM
Hynix Semiconductor (Hyundai Electronics) HMP525F7FFP4C-Y5N3 2GB
Latency
57
Read speed
3,233.2
Write speed
2,179.8
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Últimas comparações
Samsung M471A5143SB1-CRC 4GB
Corsair CM4X16GE2133C13K8 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M471A5143SB1-CRC 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-4000C18-8GTZR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kllisre M378A5143EB2-CRC 4GB
Corsair CML16GX3M2A1600C10 8GB
Kingston KHX3466C16D4/16GX 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-2933C16-8GFX 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL16G32C16U4BL.M16FE 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2133C15-16GRS 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CM5S16GM4800A40K2 16GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905702-120.A00G 8GB
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