RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
2421
RAM
Nanya Technology NT4GTT72U4PB1UN-3C 2GB
Latency
99
Read speed
2,938.2
Write speed
1,967.2
№
2422
RAM
Samsung M395T2863QZ4-CE66 512MB
Latency
99
Read speed
3,042.3
Write speed
1,838.4
№
2423
RAM
Micron Technology 36HF51272FZ667H1D6 4GB
Latency
99
Read speed
3,139.0
Write speed
2,012.9
№
2424
RAM
Ramaxel Technology RML1520KR48D7F-667 1GB
Latency
99
Read speed
1,832.2
Write speed
1,022.6
№
2425
RAM
Kingston DGM431NABINTD1F 2GB
Latency
100
Read speed
2,798.1
Write speed
2,102.7
№
2426
RAM
Crucial Technology CT12864AA800.M8FE 1GB
Latency
100
Read speed
2,415.9
Write speed
2,044.7
№
2427
RAM
Nanya Technology NT4GT72U4ND0BV-AD 4GB
Latency
100
Read speed
3,366.2
Write speed
1,967.9
№
2428
RAM
SK Hynix HYMP151P72CP4-Y5 4GB
Latency
100
Read speed
3,300.0
Write speed
3,159.8
№
2429
RAM
Infineon (Siemens) 64T128021HDL3.7B 1GB
Latency
101
Read speed
1,102.2
Write speed
325.1
№
2430
RAM
Strontium SRP2G86S1-Y5H 2GB
Latency
101
Read speed
2,349.0
Write speed
1,613.3
№
2431
RAM
AENEON AET760UD00-370B97S 1GB
Latency
101
Read speed
1,260.7
Write speed
735.0
№
2432
RAM
Micron Technology 18HF12872FD667D6D4 1GB
Latency
101
Read speed
3,532.8
Write speed
2,108.5
№
2433
RAM
Samsung M395T2953EZ4-CE66 1GB
Latency
101
Read speed
2,901.6
Write speed
1,957.0
№
2434
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F
Latency
101
Read speed
2,842.6
Write speed
2,036.2
№
2435
RAM
ASint Technology B1YJ5S73FN1 1GB
Latency
101
Read speed
1,281.6
Write speed
874.9
№
2436
RAM
SK Hynix HYMP512S64BP8-C4 1GB
Latency
101
Read speed
1,124.1
Write speed
359.5
№
2437
RAM
Elpida EBE51FD8AGFD-6E-E 512MB
Latency
101
Read speed
3,577.6
Write speed
1,789.2
№
2438
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7AFR4C-Y5D5 8GB
Latency
102
Read speed
2,665.8
Write speed
2,017.5
№
2439
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5N3 1GB
Latency
102
Read speed
3,530.5
Write speed
2,074.6
№
2440
RAM
Micron Technology 36GTF51272F667E2D6 2GB
Latency
102
Read speed
2,711.9
Write speed
2,034.7
«
119
120
121
122
123
124
»
Ultimi confronti
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.D2GG7.AU30B 16GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M471A2K43CB1-CRCR 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C19-4GVK 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CM4X32GC3200C16K2E 32GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3600C14-16GVKA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]209F 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMK16GX4M2B3600C18 8GB
Kingston 9905403-011.A03LF 2GB
Kingston KTD3KX-MIB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-16GVR 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Segnala un bug
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Polski 
中文 
日本語 
