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Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2421
RAM
Nanya Technology NT4GTT72U4PB1UN-3C 2GB
Latency
99
Read speed
2,938.2
Write speed
1,967.2
№
2422
RAM
Samsung M395T2863QZ4-CE66 512MB
Latency
99
Read speed
3,042.3
Write speed
1,838.4
№
2423
RAM
Micron Technology 36HF51272FZ667H1D6 4GB
Latency
99
Read speed
3,139.0
Write speed
2,012.9
№
2424
RAM
Ramaxel Technology RML1520KR48D7F-667 1GB
Latency
99
Read speed
1,832.2
Write speed
1,022.6
№
2425
RAM
Kingston DGM431NABINTD1F 2GB
Latency
100
Read speed
2,798.1
Write speed
2,102.7
№
2426
RAM
Crucial Technology CT12864AA800.M8FE 1GB
Latency
100
Read speed
2,415.9
Write speed
2,044.7
№
2427
RAM
Nanya Technology NT4GT72U4ND0BV-AD 4GB
Latency
100
Read speed
3,366.2
Write speed
1,967.9
№
2428
RAM
SK Hynix HYMP151P72CP4-Y5 4GB
Latency
100
Read speed
3,300.0
Write speed
3,159.8
№
2429
RAM
Infineon (Siemens) 64T128021HDL3.7B 1GB
Latency
101
Read speed
1,102.2
Write speed
325.1
№
2430
RAM
Strontium SRP2G86S1-Y5H 2GB
Latency
101
Read speed
2,349.0
Write speed
1,613.3
№
2431
RAM
AENEON AET760UD00-370B97S 1GB
Latency
101
Read speed
1,260.7
Write speed
735.0
№
2432
RAM
Micron Technology 18HF12872FD667D6D4 1GB
Latency
101
Read speed
3,532.8
Write speed
2,108.5
№
2433
RAM
Samsung M395T2953EZ4-CE66 1GB
Latency
101
Read speed
2,901.6
Write speed
1,957.0
№
2434
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F
Latency
101
Read speed
2,842.6
Write speed
2,036.2
№
2435
RAM
ASint Technology B1YJ5S73FN1 1GB
Latency
101
Read speed
1,281.6
Write speed
874.9
№
2436
RAM
SK Hynix HYMP512S64BP8-C4 1GB
Latency
101
Read speed
1,124.1
Write speed
359.5
№
2437
RAM
Elpida EBE51FD8AGFD-6E-E 512MB
Latency
101
Read speed
3,577.6
Write speed
1,789.2
№
2438
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7AFR4C-Y5D5 8GB
Latency
102
Read speed
2,665.8
Write speed
2,017.5
№
2439
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5N3 1GB
Latency
102
Read speed
3,530.5
Write speed
2,074.6
№
2440
RAM
Micron Technology 36GTF51272F667E2D6 2GB
Latency
102
Read speed
2,711.9
Write speed
2,034.7
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Últimas comparações
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK16GX4M1B3000C15 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMU32GX4M4D3000C16 8GB
Samsung M393B1K70QB0-CK0 8GB
Gloway International (HK) STK4U2400D17081C 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK64GX4M4B2800C14 16GB
Samsung M378B5673EH1-CF8 2GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
Kingston 9905316-106.A02LF 1GB
Corsair CMK32GX4M2D3000C16 16GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Corsair CMX8GX3M2A1600C11 4GB
Kingston 9905598-025.A00G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK32GX4M4C3000C16 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-2800C16-8GVG 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMT64GX4M8X3600C18 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C
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