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比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
2421
RAM
Nanya Technology NT4GTT72U4PB1UN-3C 2GB
Latency
99
Read speed
2,938.2
Write speed
1,967.2
№
2422
RAM
Samsung M395T2863QZ4-CE66 512MB
Latency
99
Read speed
3,042.3
Write speed
1,838.4
№
2423
RAM
Micron Technology 36HF51272FZ667H1D6 4GB
Latency
99
Read speed
3,139.0
Write speed
2,012.9
№
2424
RAM
Ramaxel Technology RML1520KR48D7F-667 1GB
Latency
99
Read speed
1,832.2
Write speed
1,022.6
№
2425
RAM
Kingston DGM431NABINTD1F 2GB
Latency
100
Read speed
2,798.1
Write speed
2,102.7
№
2426
RAM
Crucial Technology CT12864AA800.M8FE 1GB
Latency
100
Read speed
2,415.9
Write speed
2,044.7
№
2427
RAM
Nanya Technology NT4GT72U4ND0BV-AD 4GB
Latency
100
Read speed
3,366.2
Write speed
1,967.9
№
2428
RAM
SK Hynix HYMP151P72CP4-Y5 4GB
Latency
100
Read speed
3,300.0
Write speed
3,159.8
№
2429
RAM
Infineon (Siemens) 64T128021HDL3.7B 1GB
Latency
101
Read speed
1,102.2
Write speed
325.1
№
2430
RAM
Strontium SRP2G86S1-Y5H 2GB
Latency
101
Read speed
2,349.0
Write speed
1,613.3
№
2431
RAM
AENEON AET760UD00-370B97S 1GB
Latency
101
Read speed
1,260.7
Write speed
735.0
№
2432
RAM
Micron Technology 18HF12872FD667D6D4 1GB
Latency
101
Read speed
3,532.8
Write speed
2,108.5
№
2433
RAM
Samsung M395T2953EZ4-CE66 1GB
Latency
101
Read speed
2,901.6
Write speed
1,957.0
№
2434
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F
Latency
101
Read speed
2,842.6
Write speed
2,036.2
№
2435
RAM
ASint Technology B1YJ5S73FN1 1GB
Latency
101
Read speed
1,281.6
Write speed
874.9
№
2436
RAM
SK Hynix HYMP512S64BP8-C4 1GB
Latency
101
Read speed
1,124.1
Write speed
359.5
№
2437
RAM
Elpida EBE51FD8AGFD-6E-E 512MB
Latency
101
Read speed
3,577.6
Write speed
1,789.2
№
2438
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7AFR4C-Y5D5 8GB
Latency
102
Read speed
2,665.8
Write speed
2,017.5
№
2439
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5N3 1GB
Latency
102
Read speed
3,530.5
Write speed
2,074.6
№
2440
RAM
Micron Technology 36GTF51272F667E2D6 2GB
Latency
102
Read speed
2,711.9
Write speed
2,034.7
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最新比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International (HK) STKD4GAM2133-F 8GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 9965589-043.E00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C15-8GVK 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMK16GX4M2B3466C16 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kllisre 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology GD2.1527WH.002 8GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M378A1K43BB2-CTD 8GB
Kingston 9905403-090.A01LF 4GB
Samsung M393A1G40DB1-CRC 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C15-4GRK 4GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9965596-016.B01G 8GB
Corsair CMK32GX5M2B5600C36 16GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
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