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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2421
RAM
Nanya Technology NT4GTT72U4PB1UN-3C 2GB
Latency
99
Read speed
2,938.2
Write speed
1,967.2
№
2422
RAM
Samsung M395T2863QZ4-CE66 512MB
Latency
99
Read speed
3,042.3
Write speed
1,838.4
№
2423
RAM
Micron Technology 36HF51272FZ667H1D6 4GB
Latency
99
Read speed
3,139.0
Write speed
2,012.9
№
2424
RAM
Ramaxel Technology RML1520KR48D7F-667 1GB
Latency
99
Read speed
1,832.2
Write speed
1,022.6
№
2425
RAM
Kingston DGM431NABINTD1F 2GB
Latency
100
Read speed
2,798.1
Write speed
2,102.7
№
2426
RAM
Crucial Technology CT12864AA800.M8FE 1GB
Latency
100
Read speed
2,415.9
Write speed
2,044.7
№
2427
RAM
Nanya Technology NT4GT72U4ND0BV-AD 4GB
Latency
100
Read speed
3,366.2
Write speed
1,967.9
№
2428
RAM
SK Hynix HYMP151P72CP4-Y5 4GB
Latency
100
Read speed
3,300.0
Write speed
3,159.8
№
2429
RAM
Infineon (Siemens) 64T128021HDL3.7B 1GB
Latency
101
Read speed
1,102.2
Write speed
325.1
№
2430
RAM
Strontium SRP2G86S1-Y5H 2GB
Latency
101
Read speed
2,349.0
Write speed
1,613.3
№
2431
RAM
AENEON AET760UD00-370B97S 1GB
Latency
101
Read speed
1,260.7
Write speed
735.0
№
2432
RAM
Micron Technology 18HF12872FD667D6D4 1GB
Latency
101
Read speed
3,532.8
Write speed
2,108.5
№
2433
RAM
Samsung M395T2953EZ4-CE66 1GB
Latency
101
Read speed
2,901.6
Write speed
1,957.0
№
2434
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F
Latency
101
Read speed
2,842.6
Write speed
2,036.2
№
2435
RAM
ASint Technology B1YJ5S73FN1 1GB
Latency
101
Read speed
1,281.6
Write speed
874.9
№
2436
RAM
SK Hynix HYMP512S64BP8-C4 1GB
Latency
101
Read speed
1,124.1
Write speed
359.5
№
2437
RAM
Elpida EBE51FD8AGFD-6E-E 512MB
Latency
101
Read speed
3,577.6
Write speed
1,789.2
№
2438
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7AFR4C-Y5D5 8GB
Latency
102
Read speed
2,665.8
Write speed
2,017.5
№
2439
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5N3 1GB
Latency
102
Read speed
3,530.5
Write speed
2,074.6
№
2440
RAM
Micron Technology 36GTF51272F667E2D6 2GB
Latency
102
Read speed
2,711.9
Write speed
2,034.7
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Последние сравнения
Team Group Inc. UD5-6400 16GB
Kingston 9905711-032.A00G 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Kingston KHX1600C9S3L/4G 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Kingston 9905403-174.A00LF 2GB
Kingston ASU21D4U5S8MB-8 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A2K43EB1-CWE 16GB
AMD R5316G1609U2K 8GB
Corsair CMK64GX4M4A2666C16 16GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMH128GX4M4E3200C16 32GB
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