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DDR5
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DDR3
DDR2
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DDR2 Lista pamięci RAM
Wszystkie moduły pamięci, posortowane według rosnącego opóźnienia
№
Szerokość pasma
Opóźnienie, ns
Prędkość odczytu, GB/s
Prędkość zapisu, GB/s
№
2421
RAM
Nanya Technology NT4GTT72U4PB1UN-3C 2GB
Latency
99
Read speed
2,938.2
Write speed
1,967.2
№
2422
RAM
Samsung M395T2863QZ4-CE66 512MB
Latency
99
Read speed
3,042.3
Write speed
1,838.4
№
2423
RAM
Micron Technology 36HF51272FZ667H1D6 4GB
Latency
99
Read speed
3,139.0
Write speed
2,012.9
№
2424
RAM
Ramaxel Technology RML1520KR48D7F-667 1GB
Latency
99
Read speed
1,832.2
Write speed
1,022.6
№
2425
RAM
Kingston DGM431NABINTD1F 2GB
Latency
100
Read speed
2,798.1
Write speed
2,102.7
№
2426
RAM
Crucial Technology CT12864AA800.M8FE 1GB
Latency
100
Read speed
2,415.9
Write speed
2,044.7
№
2427
RAM
Nanya Technology NT4GT72U4ND0BV-AD 4GB
Latency
100
Read speed
3,366.2
Write speed
1,967.9
№
2428
RAM
SK Hynix HYMP151P72CP4-Y5 4GB
Latency
100
Read speed
3,300.0
Write speed
3,159.8
№
2429
RAM
Infineon (Siemens) 64T128021HDL3.7B 1GB
Latency
101
Read speed
1,102.2
Write speed
325.1
№
2430
RAM
Strontium SRP2G86S1-Y5H 2GB
Latency
101
Read speed
2,349.0
Write speed
1,613.3
№
2431
RAM
AENEON AET760UD00-370B97S 1GB
Latency
101
Read speed
1,260.7
Write speed
735.0
№
2432
RAM
Micron Technology 18HF12872FD667D6D4 1GB
Latency
101
Read speed
3,532.8
Write speed
2,108.5
№
2433
RAM
Samsung M395T2953EZ4-CE66 1GB
Latency
101
Read speed
2,901.6
Write speed
1,957.0
№
2434
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F
Latency
101
Read speed
2,842.6
Write speed
2,036.2
№
2435
RAM
ASint Technology B1YJ5S73FN1 1GB
Latency
101
Read speed
1,281.6
Write speed
874.9
№
2436
RAM
SK Hynix HYMP512S64BP8-C4 1GB
Latency
101
Read speed
1,124.1
Write speed
359.5
№
2437
RAM
Elpida EBE51FD8AGFD-6E-E 512MB
Latency
101
Read speed
3,577.6
Write speed
1,789.2
№
2438
RAM
Hynix Semiconductor (Hyundai Electronics) HMP31GF7AFR4C-Y5D5 8GB
Latency
102
Read speed
2,665.8
Write speed
2,017.5
№
2439
RAM
Hynix Semiconductor (Hyundai Electronics) HMP512F7FFP8C-Y5N3 1GB
Latency
102
Read speed
3,530.5
Write speed
2,074.6
№
2440
RAM
Micron Technology 36GTF51272F667E2D6 2GB
Latency
102
Read speed
2,711.9
Write speed
2,034.7
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Najnowsze porównania
Smart Modular SG564568FG8N6KF-Z2 2GB
Team Group Inc. DDR4 2800 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
INTENSO M418039 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965669-008.A03G 16GB
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology M471A1K43CB1-CTD 8GB
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK16GX4M2B3466C16 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston CAC24D4S7D8MB-16 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5701-049.A00G 16GB
Kingston 9965516-112.A00LF 16GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire CL18-20-20 D4-3600 8GB
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