RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Below the latency in the PassMark tests, ns
66
122
Around 46% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Faster reading speed, GB/s
9.4
2
Average value in the tests
Faster write speed, GB/s
5.8
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
122
Read speed, GB/s
2,775.5
9.4
Write speed, GB/s
1,557.9
5.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
1411
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.1527WH.002 8GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.CAGN4.4020B 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
V-GEN D4H4GL26A8TS5 4GB
Crucial Technology CT102464BF160B.16F 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Hewlett-Packard 48U45AA# 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Apacer Technology GD2.22428S.001 8GB
Kingston 99U5428-101.A00LF 8GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3000C15-16GVR 16GB
Kingston 99U5403-468.A00LF 8GB
Samsung M378B5173QH0-CK0 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMD16GX4M2B3600C18 8GB
A-DATA Technology VDQVE1B16 2GB
Golden Empire CL16-18-18 D4-3200 8GB
Report a bug
×
Bug description
Source link