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Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A1G44BB0-CWE 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Samsung M378A1G44BB0-CWE 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Samsung M378A1G44BB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
35
Around 51% lower latency
Faster reading speed, GB/s
22.8
15.1
Average value in the tests
Faster write speed, GB/s
15.4
9.2
Average value in the tests
Reasons to consider
Samsung M378A1G44BB0-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Samsung M378A1G44BB0-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
35
Read speed, GB/s
22.8
15.1
Write speed, GB/s
15.4
9.2
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3391
2488
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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