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Hexon Technology Pte Ltd HEXON 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Hexon Technology Pte Ltd HEXON 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Hexon Technology Pte Ltd HEXON 1GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
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Faster reading speed, GB/s
3
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
62
Around -68% lower latency
Faster write speed, GB/s
12.6
1,843.6
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
62
37
Read speed, GB/s
3,556.6
16.0
Write speed, GB/s
1,843.6
12.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
542
2808
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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