RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs A-DATA Technology AO2P24HCST2-BTCS 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
A-DATA Technology AO2P24HCST2-BTCS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
79
Around 65% lower latency
Faster write speed, GB/s
9.6
8.6
Average value in the tests
Reasons to consider
A-DATA Technology AO2P24HCST2-BTCS 16GB
Report a bug
Faster reading speed, GB/s
14.5
12.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
79
Read speed, GB/s
12.4
14.5
Write speed, GB/s
9.6
8.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
1850
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
A-DATA Technology AO2P24HCST2-BTCS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
SK Hynix HMA82GS6CJR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965662-008.A01G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
A-DATA Technology AO2P24HCST2-BTCS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Kingston 9905403-061.A00LF 2GB
Corsair CMD32GX4M2B3466C16 16GB
Samsung M393B5270CH0-CH9 4GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3466C18-8GSXW 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2400C16-8GFT 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KF2666C16D4/16G 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMT64GX4M4K3600C18 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Report a bug
×
Bug description
Source link