RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around -12% lower latency
Faster reading speed, GB/s
15.4
12.4
Average value in the tests
Faster write speed, GB/s
13.4
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
25
Read speed, GB/s
12.4
15.4
Write speed, GB/s
9.6
13.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2329
2786
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Patriot Memory (PDP Systems) PSD34G16002 4GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9965596-029.B00G 4GB
Avant Technology F6451U64F9333G 4GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C19-16GTRS 16GB
Samsung M378B1G73EB0-CK0 8GB
G Skill Intl F4-2800C17-8GVR 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMT32GX4M2Z3600C18 16GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMW128GX4M8C3200C16 16GB
Report a bug
×
Bug description
Source link