RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around -8% lower latency
Faster reading speed, GB/s
18.2
12.4
Average value in the tests
Faster write speed, GB/s
17.3
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
26
Read speed, GB/s
12.4
18.2
Write speed, GB/s
9.6
17.3
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2329
3938
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3000C15-16GVR 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905663-021.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Kingston K531R8-MIN 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMT64GX4M4C3466C16 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston K1N7HK-ELC 2GB
Mushkin 99[2/7/4]200[F/T] 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK8GX4M2A2400C14 4GB
Report a bug
×
Bug description
Source link