RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
29
Around -26% lower latency
Faster reading speed, GB/s
17.2
13.4
Average value in the tests
Faster write speed, GB/s
13.0
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
23
Read speed, GB/s
13.4
17.2
Write speed, GB/s
9.0
13.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
3004
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Kingston KVR533D2N4 512MB
Essencore Limited KD48GU880-32A160U 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Mushkin 991679ES 996679ES 2GB
Corsair CMK8GX4M2B4266C19 4GB
PNY Electronics PNY 2GB
Kingston KF3200C18D4/8G 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C15-16GTZSW 16GB
Kingston 9905471-001.A01LF 2GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Kingston KHX318C10FR/8G 8GB
Kingston HP32D4U2S8MR-8 8GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK32GX4M4Z3200C16 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kllisre M471A1K43CB1-CTD 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Apacer Technology 78.CAGPP.40C0B 8GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 99U5704-001.A00G 4GB
Kingston ACR256X64D3S1333C9 2GB
Hewlett-Packard 48U45AA# 16GB
Report a bug
×
Bug description
Source link