RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB vs Patriot Memory (PDP Systems) PSD416G266681 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Overall score
Patriot Memory (PDP Systems) PSD416G266681 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Report a bug
Reasons to consider
Patriot Memory (PDP Systems) PSD416G266681 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
46
Around -44% lower latency
Faster reading speed, GB/s
14.9
4.8
Average value in the tests
Faster write speed, GB/s
10.2
4.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
46
32
Read speed, GB/s
4.8
14.9
Write speed, GB/s
4.5
10.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1046
2942
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Golden Empire CL15-17-17 D4-2666 8GB
Patriot Memory (PDP Systems) PSD416G266681 16GB RAM comparisons
G Skill Intl F4-3600C16-8GTZKK 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A
Patriot Memory (PDP Systems) PSD416G266681 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Gloway International (HK) STK4U2400D15082C 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Kingston 9905584-016.A00LF 4GB
Transcend Information JM2666HLE-16G 16GB
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation PUD42133C154G2VS 4GB
Samsung M391B5673FH0-CH9 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Kingston 9905584-016.A00LF 4GB
Kingston X6TCK6-MIE 32GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-2666C18-4GFX 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
Kingston KHX3200C18D4/8G 8GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Report a bug
×
Bug description
Source link