Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB vs A-DATA Technology AM1L16BC8R2-B1QS 8GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB

Overall score
star star star star star
A-DATA Technology AM1L16BC8R2-B1QS 8GB

A-DATA Technology AM1L16BC8R2-B1QS 8GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 45
    Around 40% lower latency
  • Faster reading speed, GB/s
    12 left arrow 11.3
    Average value in the tests
  • Faster write speed, GB/s
    8.1 left arrow 7.3
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT451B6AFR8A-PB 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 45
  • Read speed, GB/s
    11.3 left arrow 12.0
  • Write speed, GB/s
    7.3 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1965 left arrow 2127
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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